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TGA4532 k-band power amplifier preliminary data sheet: rev a 03/24/11 - 1 of 12 - disclaimer: sub j ect to chan g e without notice ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? applications ? point-to-point radio ? communication product features functional block diagram ? frequency range: 17.5 ? 20 ghz ? power: 32.5 dbm psat, 31.5 dbm p1db ? gain: 23 db ? toi: 43 dbm @ 22 dbm scl ? return loss: 18 db ? nf: 6 db ? integrated power detector ? bias: vd = 6 v, id = 900 ma, vg = -0.7 v typical ? dimensions: 2.4 x 1.9 x 0.1 mm 1 vg vd vd vg r f in rf out vdet vref 3 6 5 74 2 8 general description bond pad configuration the triquint TGA4532 is a k-band power amplifier. the TGA4532 operates from 17.5 to 20 ghz and is designed using triquint?s power phemt production process. the TGA4532 typically provides 31.5 dbm of output power at 1db gain compression with small signal gain of 23 db. third order intercept is 43 dbm at 22 dbm scl. the TGA4532 is ideally suited for point-to-point radio, and k-band communications. lead-free and rohs compliant bond pad # symbol 1 rf in 2, 8 vg 3, 7 vd 4 vref 5 vdet 6 rf out ordering information part no. eccn description TGA4532 3a001.b.2.c k-band power amplifier standard order qty = 100 pieces. www.datasheet.net/ datasheet pdf - http://www..co.kr/
TGA4532 k-band power amplifier preliminary data sheet: rev a 03/24/11 - 2 of 12 - disclaimer: sub j ect to chan g e without notice ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? specifications absolute maximum ratings parameter rating drain to gate voltage, vd - vg 10 v drain voltage,vd +6.5 v gate voltage,vg -4 to 0 v drain current, id 1960 ma gate current, ig -8.2 to 113 ma power dissipation, pdiss 12.7 w rf input power, cw, 50 ? ,t = 25oc 26 dbm channel temperature, tch 200 o c mounting temperature (30 seconds) 320 o c storage temperature -40 to 150 o c operation of this device outsi de the parameter ranges given above may cause permanent damage. these are stress ratings only, and functional opera tion of the device at these conditions is not implied. recommended operating conditions parameter min typical max units vd 6 v id 900 ma id_drive (under rf drive) 1200 ma vg -0.7 v electrical specifi cations are measured at sp ecified test conditions. specifications are not guarantee d over all recommended operating conditions. electrical specifications test conditions unless otherwise noted: 25oc, vd = 6 v, id = 900 ma, vg = -0.7 v typical . parameter min typical max units operational frequency range 17.7 19.7 ghz gain 21 23 db input return loss -18 -14 db output return loss -18 -14 db output power @ saturation 32.5 dbm output power @ 1 db gain compression 30 31.5 dbm output toi @ 22 dbm scl 40 43 dbm noise figure 6 db gain temperature coefficient -0.025 db/c power temperature coefficient -0.005 dbm/c www.datasheet.net/ datasheet pdf - http://www..co.kr/
TGA4532 k-band power amplifier preliminary data sheet: rev a 03/24/11 - 3 of 12 - disclaimer: sub j ect to chan g e without notice ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? specifications (cont.) thermal and reliability information parameter condition rating thermal resistance, jc , measured to back of package tbase = 70 c jc = 8.51 c/w channel temperature (tch), and median lifetime (tm) tbase = 70 c, vd = 6 v, id = 900 ma, pdiss = 5.4 w tch = 116 c tm = 6.3 e+7 hours channel temperature (tch), and median lifetime (tm) under rf drive tbase = 70 c, vd = 6 v, id = 1200 ma, pout = 32.5 dbm, pdiss = 5.4 w tch = 116 c tm = 6.3 e+7 hours 1.e+04 1.e+05 1.e+06 1.e+07 1.e+08 1.e+09 1.e+10 1.e+11 1.e+12 1.e+13 1.e+14 1.e+15 25 50 75 100 125 150 175 200 median lifetime, tm (hours) channel temperature, tch (c) median lifetime (tm) vs. channel temperature (tch) fet5 www.datasheet.net/ datasheet pdf - http://www..co.kr/
TGA4532 k-band power amplifier preliminary data sheet: rev a 03/24/11 - 4 of 12 - disclaimer: sub j ect to chan g e without notice ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? typical performance -28 -26 -24 -22 -20 -18 -16 -14 -12 -10 10 12 14 16 18 20 22 24 26 28 17.5 18 18.5 19 19.5 20 return loss (db) gain (db) frequency (ghz) s-parameters vs. frequency vd = 6 v, id = 900 ma, vg = -0.7 v typical, +25 0 c gain irl orl -45 -40 -35 -30 -25 -20 -15 -10 -5 0 10 12 14 16 18 20 22 24 26 28 12 13 14 15 16 17 18 19 20 21 22 23 24 25 return loss (db) gain (db) frequency (ghz) s-parameters vs. frequency vd = 6 v, id = 900 ma, vg = -0.7 v typical, +25 0 c gain irl orl 25 26 27 28 29 30 31 32 33 34 16 16.5 17 17.5 18 18.5 19 19.5 20 20.5 21 output power (dbm) frequency (ghz) output power vs. frequency vd = 6 v, id = 900 ma, vg = -0.7 v typical, +25 0 c psat p1db 900 950 1000 1050 1100 1150 1200 1250 1300 1350 16 18 20 22 24 26 28 30 32 34 -6 -4 -2 0 2 4 6 8 10 12 14 16 id (ma) power (dbm), gain (db) input power (dbm) pout, gain, id vs. pin @ 18.7 ghz vd = 6 v, id = 900 ma, vg = -0.7 v typical, +25 0 c power gain id 0.001 0.01 0.1 1 10 -10-5 0 5 101520253035 vdiff (v) output power (dbm) power detector vs. pout vs. frequency vd = 6 v, id = 900 ma, vg = -0.7 v typical, +25 0 c 17.7ghz 18.7ghz 19.7ghz 35 36 37 38 39 40 41 42 43 44 16 16.5 17 17.5 18 18.5 19 19.5 20 20.5 21 output toi (dbm) frequency (ghz) toi vs. frequency vs. pout/tone vd = 6 v, id = 900 ma, vg = -0.7 v typical, +25 0 c pout/tone = 22dbm pout/tone = 21dbm www.datasheet.net/ datasheet pdf - http://www..co.kr/
TGA4532 k-band power amplifier preliminary data sheet: rev a 03/24/11 - 5 of 12 - disclaimer: sub j ect to chan g e without notice ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? typical performance (cont.) -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 19 20 21 22 23 24 25 26 im3 (dbc) pout/tone (dbm) im3 vs. pout/tone vs. frequency vd = 6 v, id = 900 ma, vg = -0.7 v typical, +25 0 c 17.7ghz 18.7ghz 19.7ghz -80 -75 -70 -65 -60 -55 -50 -45 -40 -35 -30 19 20 21 22 23 24 25 26 im5 (dbc) pout/tone (dbm) im5 vs. pout/tone vs. frequency vd = 6 v, id = 900 ma, vg = -0.7 v typical, +25 0 c 17.7ghz 18.7ghz 19.7ghz 0 1 2 3 4 5 6 7 8 9 10 16 16.5 17 17.5 18 18.5 19 19.5 20 20.5 21 noise figure (db) frequency (ghz) noise figure vs. frequency vd = 6 v, id = 900 ma, vg = -0.7 v typical, +25 0 c 10 12 14 16 18 20 22 24 26 28 16 16.5 17 17.5 18 18.5 19 19.5 20 20.5 21 gain db frequency (ghz) gain vs. frequency vs. id vd = 6 v, id = 1.1 - 1.3 a, +25 0 c 6v 900ma 6v 816ma 25 26 27 28 29 30 31 32 33 34 16 16.5 17 17.5 18 18.5 19 19.5 20 20.5 21 p1db (dbm) frequency (ghz) p1db vs. frequency vs. id vd = 6 v, id = 730 - 980 ma, +25 0 c 6v 980ma 6v 900ma 6v 816ma 6v 730ma 35 36 37 38 39 40 41 42 43 44 16 16.5 17 17.5 18 18.5 19 19.5 20 20.5 21 otoi @ 22dbm pout/tone (dbm) frequency (ghz) toi vs. frequency vs. id vd = 6 v, id = 816 - 900 ma, +25 0 c 6v 900ma 6v 816ma www.datasheet.net/ datasheet pdf - http://www..co.kr/
TGA4532 k-band power amplifier preliminary data sheet: rev a 03/24/11 - 6 of 12 - disclaimer: sub j ect to chan g e without notice ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? typical performance (cont.) 12 14 16 18 20 22 24 26 28 30 16 16.5 17 17.5 18 18.5 19 19.5 20 20.5 21 gain (db) frequency (ghz) gain vs. frequency vs. temperature vd = 6 v, id = 900 ma, vg = -0.7 v typical -40c +25c +85c 25 26 27 28 29 30 31 32 33 34 16 16.5 17 17.5 18 18.5 19 19.5 20 20.5 21 p1db (dbm) frequency (ghz) p1db vs. frequency vs. temperature vd = 6 v, id = 900 ma, vg = -0.7 v typical -40c +25c +85c www.datasheet.net/ datasheet pdf - http://www..co.kr/
TGA4532 k-band power amplifier preliminary data sheet: rev a 03/24/11 - 7 of 12 - disclaimer: sub j ect to chan g e without notice ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? application circuit vg can be biased from either side (bond pad 2 or bond pad 8), and the non-biased side can be left open. vd must be biased from both sides (bond pad 3 and bond pad 7). bias-up procedure bias-down procedure vg set to -1.5 v turn off rf supply vd set to +6 v reduce vg to -1.5v. ensure id ~ 0 ma adjust vg more positive until quiescent id is 900 ma. this will be ~ vg = -0.7 v turn vd to 0 v apply rf signal to rf input turn vg to 0 v 1 vg -0.7 v typical j1 rf in j2 rf out vref 3 6 5 74 2 8 r2 15 ohm c8 1 uf c9 1 uf r1 15 ohm c7 1 uf vd = 6 v, id = 900 ma vdet vdiff r3 r4 40k ohm 40k ohm 5 v c2 100 pf c5 0.01 uf c6 0.01 uf c3 100 pf c4 0.01 uf c1 100 pf www.datasheet.net/ datasheet pdf - http://www..co.kr/
TGA4532 k-band power amplifier preliminary data sheet: rev a 03/24/11 - 8 of 12 - disclaimer: sub j ect to chan g e without notice ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? bond pad description bond pad symbol description 1 rf in input, matched to 50 ohms 2, 8 vg gate voltage. esd protection included; bias network is required; can be biased from either side (bond pad 2 or bond pad 8), and non-biased side can be left opened; see application circuit on page 7 as an example. 3, 7 vd drain voltage. bias network is required; must be biased from both sides; see application circuit on page 7 as an example. 4 vref reference diode output voltage. 5 vdet detector diode output voltage. varies with rf output power. 6 rf out output, matched to 50 ohms 1 2 345 6 7 8 www.datasheet.net/ datasheet pdf - http://www..co.kr/
TGA4532 k-band power amplifier preliminary data sheet: rev a 03/24/11 - 9 of 12 - disclaimer: sub j ect to chan g e without notice ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? assembly drawing rf in vd rf out vd c1 100 pf c4 0.01 uf vg r2 15 ohm c2 100 pf c5 0.01 uf c6 0.01 uf c3 100 pf c8 1 uf r1 15 ohm c7 1 uf c9 1 uf vd = 6v, id = 900ma v g = -0.7v typical bill of material ref des value description manufacturer part number c1, c2, c3 100 pf cap, 50v, 25%, single layer cap various c4, c5, c6 0.01 uf cap, 50v, 10%, smd various c7, c8, c9 1 uf cap, 50v, 5% various r1, r2 15 ohms res, 1/4w, 5% various www.datasheet.net/ datasheet pdf - http://www..co.kr/
TGA4532 k-band power amplifier preliminary data sheet: rev a 03/24/11 - 10 of 12 - disclaimer: sub j ect to chan g e without notice ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? mechanical information unit: millimeters thickness: 0.10 die x, y size tolerance: +/- 0.050 chip edge to bond pad dimensions are shown to center of pad ground is backside of die 1 2 345 6 7 8 0.0 0.108 0.705 1.821 2.400 2.001 0.704 1.821 2.145 0.0 1.489 1.791 1.900 0.108 0.496 2.292 1.792 0.109 bond pad symbol pad size 1 rf in 0.100 x 0.200 2, 8 vg 0.100 x 0.100 3, 7 vd 0.180 x 0.100 4 vred 0.100 x 0.100 5 vdet 0.100 x 0.100 6 rf out 0.100 x 0.200 www.datasheet.net/ datasheet pdf - http://www..co.kr/
TGA4532 k-band power amplifier preliminary data sheet: rev a 03/24/11 - 11 of 12 - disclaimer: sub j ect to chan g e without notice ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? product compliance information esd information esd rating: 1a value: passes 250v min. test: human body model (hbm) standard: jedec standard jesd22-a114 solderability this part is compliant with eu 2002/95/ec rohs directive (restrictions on the use of certain hazardous substances in electrical and electronic equipment). this product also has the following attributes: ? lead free ? halogen free (chlorine, bromine) ? antimony free ? tbbp-a (c 15 h 12 br 4 0 2 ) free ? pfos free ? svhc free eccn us department of commerce 3a001.b.2.c assembly notes component placement and adhesive attachment assembly notes: ? vacuum pencils and/or vacuum collets are the preferred me thod of pick up. ? air bridges must be av oided during placement. ? the force impact is critical during auto placement. ? organic attachment (i.e. epoxy) can be used in low-power applications. ? curing should be done in a convection oven; proper exhaust is a safety concern. reflow process assembly notes: ? use ausn (80/20) solder and limit exposure to temperatures above 300 c to 3-4 minutes, maximum. ? an alloy station or conveyor furnace with reducing atmosphere should be used. ? do not use any kind of flux. ? coefficient of thermal expansion matching is critical for long-term reliability. ? devices must be stored in a dry nitrogen atmosphere. interconnect process assembly notes: ? thermosonic ball bonding is the preferred interconnect technique. ? force, time, and ultrasonics are critical parameters. ? aluminum wire should not be used. ? devices with small pad sizes should be bonded with 0.0007-inch wire. www.datasheet.net/ datasheet pdf - http://www..co.kr/
TGA4532 k-band power amplifier preliminary data sheet: rev a 03/24/11 - 12 of 12 - disclaimer: sub j ect to chan g e without notice ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? contact information for the latest specifications, additional product information, worldwide sales and distribution locations, and information abou t triquint: web: www.triquint.com tel: +1.972.994.8465 email: info-sales@tqs.com fax: +1.972.994.8504 for technical questions and application information: email: info-networks@tqs.com important notice the information contained herein is believed to be reliable. triquint makes no warranties regarding the information contained herein. triquint assumes no responsibility or liability whatso ever for any of the information contained herein. triquint assumes no responsibility or liability whatsoever for the use of the information contained herein. the information contained herein is provided "as is, where is" and with all faults, and th e entire risk associated with such information is entirely with the user. all information contained herein is subject to change without notice. customers should obtain and verify the latest relevant information before placing orders for triquint products. the information contained herein or any use of such information does not grant, explicitly or implicitly, to any part y any patent rights, licenses, or any other intellectual prope rty rights, whether with regard to such information itself or anything described by such information. triquint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reason ably be expected to cause severe personal injury or death. copyright ? 2011 triquint semiconductor, inc. all rights reserved. www.datasheet.net/ datasheet pdf - http://www..co.kr/

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